Graduate Courses

Professor Jerry G. Fossum


FALL 2008 -

EEL 6390 - VLSI Device Design (Syllabus)

Credits: 3
Prerequisite: EEE 5400, or introductory understanding of semiconductor device physics
Description: Basic MOSFET physics. Criteria and tradeoffs involved in the design of Si-based CMOS devices in scaled VLSI integrated-circuit technologies.


FUTURE COURSE OFFERINGS -

EEL 6325 - Computer Simulation of Integrated Circuits and Devices (Syllabus)

Credits: 3
Prerequisite: Graduate-student standing
Description: Basic methods of numerical simulation of semiconductor devices and electronic circuits; PDE discretization, numerical integration, Newton/iterative linearization, linearized system solution.  

 

EEL 6397 - Semiconductor Device Theory (Syllabus)

Credits: 3
Prerequisite: EEE 5426 or equivalent
Description: Basic physics of semiconductors and pn junctions; energy bands, density of states, electron and hole effective masses, equilibrium and nonequilibrium properties, Fermi-Dirac statistics, mass action, quasi-Fermi levels, recombination/generation, carrier transport. Basic mechanisms in bipolar junction transistors, heterojunctions (HBT), low- and high-current effects, high-frequency characteristics.

 

EEE 6470 - Nonclassical Silicon-Based Nanoscale CMOS Device (Syllabus)

Credits: 3
Prerequisite: EEL 6390
Description: Properties and performance potentials of nonclassical CMOS devices that could replace classical devices when the scaling limit of the latter is reached; UTB single-gate, double-gate, and triple-gate MOSFETs.