FALL 2008 -
EEL 6390 - VLSI Device Design (Syllabus)
Credits: 3
Prerequisite:
EEE 5400, or introductory understanding of semiconductor device physics
Description: Basic MOSFET physics. Criteria and tradeoffs involved in the design
of Si-based CMOS devices in scaled VLSI integrated-circuit technologies.
FUTURE COURSE OFFERINGS -
EEL 6325 - Computer Simulation of Integrated Circuits and Devices
(Syllabus)
Credits: 3
Description: Basic methods of numerical simulation of semiconductor devices
and electronic circuits; PDE discretization, numerical integration, Newton/iterative
linearization, linearized system solution.
EEL 6397 - Semiconductor Device Theory
(Syllabus)
Credits: 3
Description: Basic physics of semiconductors and pn junctions; energy bands,
density of states, electron and hole effective masses, equilibrium and nonequilibrium properties,
Fermi-Dirac statistics, mass action, quasi-Fermi levels, recombination/generation, carrier transport.
Basic mechanisms in bipolar junction transistors, heterojunctions (HBT), low- and
high-current effects, high-frequency characteristics.
EEE 6470 - Nonclassical Silicon-Based Nanoscale CMOS Device
(Syllabus)
Credits: 3
Description: Properties and performance potentials of nonclassical
CMOS devices that could replace classical devices when the scaling limit
of the latter is reached; UTB single-gate, double-gate, and triple-gate MOSFETs.